|
|
|
Categories
|
|
Information
|
|
Featured Product
|
|
|
 |
|
|
There are currently no product reviews.
 ;
Good pdf of the service manual for this unit. Includes disassembly instructions, full schematics, board layouts, parts lists and diagnostic information. Some information is in the pdf twice (single pages, and split pages), but that could be how it was originally generated by panasonic, or perhaps the idea is to make it eaiser to put onto 8.5 x 11" pages.
Information was exactly what I needed. Delivery was overnight (less than 12 hours) and I was happy with the process.
 ;
5 STARS for FAST DELIVERY, BEST PRICES and QUALITY PRODUCT. Item was exactly as described with superb resolution. Will definitely source all my future requirements from this website. Thanks a lot owner-manual.com!
 ;
OEM manual provided all schematics, board layouts and component specs necessary to facilitate unit maintenance. All pages were clear and readable.
 ;
Good condition and quality. Hard to find anywhere in Internet, only on this site.
 ;
Exactly what I needed to be able to bring the amp back to life... will come back to this site the next time I need schematics.
VESTEL R&D Hardware Requirement Specification
11AK56
ABSOLUTE MAXIMUMRATINGS
2.2.2.6.1.2.
MOSFET
The MTP3N60E used for voltage range 170-270V, The MTP6N60E used for voltage range 90 � 270V. 2.2.2.6.1.2.1. MTP3N60E
N�Channel Enhancement�Mode Silicon Gate This advanced high voltage TMOS E�FET is designed to with stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain�to� source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
© Copyright 2003 VESTEL Group of Company
Avalanche Energy Capability Specified at Elevated Temperature Low Stored Gate Charge for Efficient Switching Internal Source�to�Drain Diode Designed to Replace External Zener Transient Suppressor � Absorbs High Energy in the Avalanche Mode Source�to�Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
All rights reserved. Passing on copying this document, use and communication of its contents not permitted without written permission from VESTEL
24
|
|
 |
> |
|