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Text excerpt from page 55 (click to view)
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(2.2) Recording Power Adjustment
Objective
To optimize the playback power of laser diode (LD). A
Symptom when out of adjustment
When a gap is terrible : Player does not playback, track search is impossible When a gap is light : RF waveform is dirty. STOP
Measurement Instru- Shine the light emitted from the objective Player state
lens on the light power meter sensor. Wavelength 780nm Ave. mode
Adjustment location Set the value with the command Disc
None needed B
[Procedure]
[Write Power Low Adjustment]
"1AW"
Adjust with UP/DN command so that the indication of light power meter becomes 3.4 ± 0.1mW.
"EE"
(Store the adjustment value in the nonvolatile memory)
[Write Power High Adjustment]
"0AW"
Adjust with UP/DN command so that the indication of light power meter becomes 5.9 ± 0.1mW.
"EE"
(Store the adjustment value in the nonvolatile memory)
C
[Erase Power Low Adjustment]
"3AW" "EE"
Adjust with UP/DN command so that the indication of light power meter becomes 3.6 ± 0.1mW.
ment connections
(Store the adjustment value in the nonvolatile memory)
[Erase Power High Adjustment]
"2AW"
Adjust with UP/DN command so that the indication of light power meter becomes 6.5 ± 0.1mW.
"EE"
(Store the adjustment value in the nonvolatile memory)
D
[Erase Power APC Low Adjustment]
"2DT" (Selects CD-RW mode) "5AW"
Adjust with UP/DN command so that the indication of light power meter becomes 7.6 ± 0.1mW.
"EE"
(Store the adjustment value in the nonvolatile memory)
[Erase Power APC High Adjustment]
"4AW"
Adjust with UP/DN command so that the indication of light power meter becomes 15.1 ± 0.1mW.
"EE"
(Store the adjustment value in the nonvolatile memory)
E
[RW Erase Power Low Adjustment]
"7AW"
Adjust with UP/DN command so that the indication of light power meter becomes 5.3 ± 0.1mW.
"EE"
(Store the adjustment value in the nonvolatile memory)
[RW Erase Power High Adjustment]
"6AW"
Adjust with UP/DN command so that the indication of light power meter becomes 10.2 ± 0.1mW.
"EE"
(Store the adjustment value in the nonvolatile memory)
