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When I purchased this manual I had my doubts regarding the quality as the price was so reasonable as compared to other outlets.
The manual itself is of high standard the print is very clear as are the diagrams. Obviously with the diagrams one has to zoom in otherwise it is to small to be able to read.
Overall I am very pleased with the company who delivered as they said and with the manual they supplied.
I occasionally require a manual and now having registered with this company I shall order from them in the future.
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I was at first dubious about payiong for downloaded manuals but having done so, I was extremely impressed with quality of the two manual I ordered, well worth the small price I paid.
I would highly recommend these to my friends.
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reasonable price for the schematic - the service is perfect, all as expected and pointed by instructions - good scan of the original plans - thank you!
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Manual was just as described!!! I odered it and in less than a day was able to download it and the text was clear and pages were all complete just as the original manual was. Purcashed this for a friend and they were more than happy. Perfect all around!
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Excellent service and prompt delivery. But it's not a manual - only 4 pages wiring diagrams.
Thanks.
VESTEL R&D Hardware Requirement Specification
11AK56
ABSOLUTE MAXIMUMRATINGS
2.2.2.6.1.2.
MOSFET
The MTP3N60E used for voltage range 170-270V, The MTP6N60E used for voltage range 90 � 270V. 2.2.2.6.1.2.1. MTP3N60E
N�Channel Enhancement�Mode Silicon Gate This advanced high voltage TMOS E�FET is designed to with stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain�to� source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
© Copyright 2003 VESTEL Group of Company
Avalanche Energy Capability Specified at Elevated Temperature Low Stored Gate Charge for Efficient Switching Internal Source�to�Drain Diode Designed to Replace External Zener Transient Suppressor � Absorbs High Energy in the Avalanche Mode Source�to�Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
All rights reserved. Passing on copying this document, use and communication of its contents not permitted without written permission from VESTEL
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